Power semiconductor devices are key devices in power electronics, and they are playing a pivotal role in electric and electronic equipment in a wide range of fields including consumer equipment, information and communications equipment, business equipment, industrial equipment, automobile, electric railways, and electric power systems. In recent years steady improvement has been made in high-voltage, high-power, and low-loss performance of individual devices, and remarkable advancement has been made in fast switching characteristics, and intelligent features of the devices through improved integration and function of power ICs and power modules. Moreover, research and development of new types of power semiconductor devices, such as devices using super junctions are continuing, and rapid progress is also being made in the development and practical application of new semiconductor materials such as, SiC and GaN. Aggressive research works are continuing in manufacturing processes development and in finding more sophisticated CAD and simulation techniques, and development of new applications.
The 1st International Symposium on Power Semiconductor Devices and ICs (ISPSD) was organized by the Institute of Electrical Engineers of Japan and held in Tokyo in 1988 as an international platform for promoting comprehensive discussion on the materials, design, manufacturing processes, characteristics, testing, and applications for power semiconductor devices. Subsequently, the ISPSD was held seven times in Japan as organized by the Institute of Electrical Engineers of Japan, and once in the Republic of Korea, seven times in North America and five times in Europe as organized by the IEEE and co-organized by the Institute of Electrical Engineers of Japan, and each of them was well received and recorded as a success. The 21st ISPSD took place in Europe in 2009. While rotating the ISPSD among three regions from Japan, Korea, North America and Europe, the ISPSD has enjoyed a good reputation and high name recognition as a core international symposium in the field of power semiconductor devices, which are finding increased application worldwide and gaining even greater momentum.
Against such background, and based on the results achieved through the ISPSD symposiums held previously, the 22nd International Symposium on Power Semiconductor Devices and ICs will be held in Hiroshima City in 2010 to provide a platform for continued discussion on technological development in the field of power semiconductor devices, which is undergoing a remarkable progress.